Dr. Dimoulas is Research Director at NCSR DEMOKRITOS in Athens and head of the MBE laboratory since 1999; presently he has an appointment as LANEF 2016 Chair of Excellence at CEA-INAC. He received his BSc and PhD degrees from the U. of Athens and the U. Crete in Greece, respectively and he served as an EU Human Capital & Mobility fellow at the U. Groningen, Holland and research associate at CALTECH and the U. Maryland College Park, USA. He has also been a visiting research scientist at the IBM Zurich research lab in 2006 and 2007. He has coordinated several EU research projects on high-k gate dielectrics and high mobility semiconductors (Ge, InGaAs) for advanced CMOS. Since 2011, his research focuses on 2D materials (graphene, silicene, germanene and transition metal dichalcogenides) for power scaling of nanoelectronic devices and has received the ERC Advanced Grant SMARTGATE for this work. He has served as general chair of INFOS 2007 conference and TPC chair of ESSDERC 2009 as well as Process Technology subcommittee chair of IEDM 2012. He has numerous technical publications and invited conference presentations and he is the co-editor of a Springer book on “High-k gate dielectrics” and a recently published (2016) CRC press book on “2D Materials for Nanoelectronics”.
Short description of activities as Chair of Excellence at LANEF
Two-dimensional (2D) transition metal dichalcogenide (TMD) materials have proven their potential to impact nano- and opto-electronics using small size exfoliated flakes. The current trend is to synthesize 2D TMDs on large area substrates to ensure manufacturability in the longer term. In this project, we use molecular beam epitaxy (MBE) at INAC, NEEL and ESRF to grow atomically thin, continuous, uniform films on cm-scale technologically important AlN/Si(111) and sapphire substrates. We take advantage of the high (atomic) resolution capability of synchrotron X-Ray at ESRF and a number of state of the art surface characterization techniques at INAC to understand the initial stages of growth, the domain formation and the electrically active defects which will allow us to improve the material quality and finally obtain electronic grade material. In addition, we study in detail, long range interactions and lattice commensurabilities which permit a better understanding of the mechanisms governing van der Waals epitaxy of TMDS on 2D as well as 3D substrates. We expect that this will allow us to perfect our materials growth and select optimum TMD semiconductors and substrate combinations and subsequently build basic device layer v d Waals heterostructures between 2D TMDs and 2D dielectrics (e,g. h-BN or h-AlN). First research devices to be processed at INAC clean room facilities will show basic electrical properties, functionality and performance characteristics. Based on these results, we will study the feasibility of developing more advanced devices for optoelectronics and spintronics in synergy with relevant ANR projects of NEEL/INAC and for low power nanoelectronics in synergy with the 2D Factory project of LETI/INAC.